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| NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945 APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. T stg Tj PC ABSOLUTE MAXIMUM RATINGS Storage Temperature - - - - - Junction Temperature - - - - - - Collector Dissipation- - - Collector-Base Voltage- - - - - - Collector-Emitter Voltage- - - - - Emitter-Base Voltage - - - - - - - - - - - Collector Current - - - - - - - Ta=25ae(c) -55~150ae 150ae 250mW 60V 50V 5V 150mA TO-92 VCBO VCEO V EB O IC 1D Emitter E 2D Collector C 3D Base B Symbol ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min Ta=25ae(c) Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE VCE(sat) VBE(sat) ICBO IEBO fT Cob NF 60 50 5 90 600 0.3 1.0 100 100 250 3.0 4.0 V V V V V nA nA MHz pF dB IC=100|I IC=100|I IE=100|I A, IE=0 A, IB=0 A IC=0 DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=10mA VCB=6V, IE=0 f=1MHz VCE=6V,IC=0.5mA f=1KHz Rs=500| Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance Noise Figure hFE Classification R ee h s90 180 ta a u. t4 om c Q 135 270 P 200 400 K 300 600 w w w .d www..com NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945 |
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